JPH0340510B2 - - Google Patents
Info
- Publication number
- JPH0340510B2 JPH0340510B2 JP61123502A JP12350286A JPH0340510B2 JP H0340510 B2 JPH0340510 B2 JP H0340510B2 JP 61123502 A JP61123502 A JP 61123502A JP 12350286 A JP12350286 A JP 12350286A JP H0340510 B2 JPH0340510 B2 JP H0340510B2
- Authority
- JP
- Japan
- Prior art keywords
- insulating film
- electrode
- region
- semiconductor substrate
- gate electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000000758 substrate Substances 0.000 claims description 18
- 239000004065 semiconductor Substances 0.000 claims description 16
- 239000003990 capacitor Substances 0.000 claims description 7
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 230000010354 integration Effects 0.000 description 3
- 239000011159 matrix material Substances 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 230000003071 parasitic effect Effects 0.000 description 3
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 230000035945 sensitivity Effects 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 241000723353 Chrysanthemum Species 0.000 description 1
- 235000005633 Chrysanthemum balsamita Nutrition 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000003574 free electron Substances 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
Landscapes
- Semiconductor Memories (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61123502A JPS6297368A (ja) | 1986-05-30 | 1986-05-30 | 半導体記憶装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61123502A JPS6297368A (ja) | 1986-05-30 | 1986-05-30 | 半導体記憶装置 |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP14569580A Division JPS5660051A (en) | 1980-10-20 | 1980-10-20 | Semiconductor memory device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6297368A JPS6297368A (ja) | 1987-05-06 |
| JPH0340510B2 true JPH0340510B2 (en]) | 1991-06-19 |
Family
ID=14862204
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61123502A Granted JPS6297368A (ja) | 1986-05-30 | 1986-05-30 | 半導体記憶装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6297368A (en]) |
-
1986
- 1986-05-30 JP JP61123502A patent/JPS6297368A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6297368A (ja) | 1987-05-06 |
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